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	<title><![CDATA[amplifier and bandwidth Resources | BNET]]></title>
	<link><![CDATA[http://resources.bnet.com/topic/amplifier+and+bandwidth.html]]></link>
	<description><![CDATA[White papers, case studies, business articles, and blog posts relating to amplifier and bandwidth]]></description>
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	<item>
		<title><![CDATA[Low-noise amplifier tops 1.5-GHz gain bandwidth. (leading edge).(National Semiconductor LMH6624)(Brief Article)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4804/is_200303/ai_n17465266]]></link>
		<description><![CDATA[NATIONAL SEMICONDUCTOR'S VIP-10 complementary-bipolar  trench-isolated silicon-on-insulator process produces high-speed  circuits that demand comparatively modest supply currents. The LMH6624  wideband amplifier adds ultralow noise to the product line    NATIONAL SEMICONDUCTOR'S VIP-10 complementary-bipolar  trench-isolated silicon-on-insulator process produces high-speed  circuits that demand comparatively modest supply...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 20 Mar 2003 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
		<category domain="http://resources.bnet.com/topic/bandwidth.html"><![CDATA[bandwidth]]></category>
		<category domain="http://resources.bnet.com/topic/national+semiconductor+corp..html"><![CDATA[National Semiconductor Corp.]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">NSM</category>
		<category domain="tickers">NSM</category>
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		<title><![CDATA[SiGe BiCMOS integrated circuits for high-speed serial communication links]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3751/is_200303/ai_n9180137]]></link>
		<description><![CDATA[Considerable progress has been made in integrating multi-Gb/s functions into silicon chips for data-and telecommunication applications. This paper reviews the key requirements for implementing such functions in monolithic form and describes their implementation in the IBM SiGe BiCMOS technology. Aspects focused on are the integration of 10-13-Gb/s serializer/deserializer chips with...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sat, 01 Mar 2003 23:59:59 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
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		<category domain="http://resources.bnet.com/topic/dr..html"><![CDATA[Dr.]]></category>
		<category domain="http://resources.bnet.com/topic/ibm+corp..html"><![CDATA[IBM Corp.]]></category>
		<category domain="http://resources.bnet.com/topic/ieee.html"><![CDATA[IEEE]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">IBM</category>
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		<title><![CDATA[Design of a generic 2.5 W, 60 percent bandwidth, C-band MMIC amplifier. (Technical Feature).]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb6601/is_200208/ai_n26036798]]></link>
		<description><![CDATA[This article reports the design and test data of a generic 2.5 W,  two-stage, C-band MMIC power amplifier developed using the MSAG[R]MESFET  process. A minimum power-added efficiency PAE of 45 percent and 2.5 W  CW output power over the 4.5 to 7.4 GHz were measured for the...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 01 Aug 2002 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
		<category domain="http://resources.bnet.com/topic/bandwidth.html"><![CDATA[bandwidth]]></category>
		<category domain="http://resources.bnet.com/topic/chip.html"><![CDATA[chip]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
		<category domain="http://resources.bnet.com/topic/ieee.html"><![CDATA[IEEE]]></category>
		<category domain="http://resources.bnet.com/topic/microwave.html"><![CDATA[microwave]]></category>
		<category domain="http://resources.bnet.com/topic/networking.html"><![CDATA[NETWORKING]]></category>
		<category domain="http://resources.bnet.com/topic/semiconductors.html"><![CDATA[Semiconductors]]></category>
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	<item>
		<title><![CDATA[InP-based HBT technology for next-generation lightwave communications. (heterojunction bipolar transistor)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb6601/is_199806/ai_n26017694]]></link>
		<description><![CDATA[InAlAs/InGaAs-InP heterojunction bipolar transistor HBT technology  offers high device speed, low 1/f flicker noise and monolithic  integration of 1.55 [[micro]meter] InGaAs photodetectors making them  well suited for next-generation, high data rate optoelectronic  communication links. Application toward next-generation [greater than]  40 Gbps communication systems is discussed,...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 01 Jun 1998 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
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		<category domain="http://resources.bnet.com/topic/gaas.html"><![CDATA[GAAS]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
		<category domain="http://resources.bnet.com/topic/ieee.html"><![CDATA[IEEE]]></category>
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	<item>
		<title><![CDATA[Analysis of noise power ratio effects on satellite communication system performance.]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb6601/is_199706/ai_n26017534]]></link>
		<description><![CDATA[NPR is an important parameter affecting performance of multicarrier  communication systems. It is particularly important in satellite  communication systems where power consumption must be minimized.  Therefore, the power amplifiers should operate close to saturation to  maximize efficiency. In a multicarrier system, carrier cross products  establish...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sun, 01 Jun 1997 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
		<category domain="http://resources.bnet.com/topic/analysis.html"><![CDATA[analysis]]></category>
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		<category domain="http://resources.bnet.com/topic/carrier.html"><![CDATA[carrier]]></category>
		<category domain="http://resources.bnet.com/topic/npr.html"><![CDATA[NPR]]></category>
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		<title><![CDATA[Time Warner eyes move to 860 MHz. (Time Warner Cable)(Broadband Week)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4895/is_199604/ai_n17971334]]></link>
		<description><![CDATA[Can Transmit 135 Channels     Time Warner Cable is taking a serious look at moving to bandwidth  levels above 750 megahertz in urban markets on the strength of a new,  power-doubling, RF hybrid developed by Philips Semiconductor.     "We are certai ...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 29 Apr 1996 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/amplifier.html"><![CDATA[amplifier]]></category>
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		<category domain="http://resources.bnet.com/topic/time+warner+cable+inc..html"><![CDATA[Time Warner Cable Inc.]]></category>
		<category domain="http://resources.bnet.com/topic/time+warner+inc..html"><![CDATA[Time Warner Inc.]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">TWC</category>
		<category domain="http://rss.financialcontent.com/stocksymbol">TWX</category>
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