BNET Industries
Market Cap:$1.3B
Last Fiscal Year Sales:$956.2M
- Public
- US
Dow Jones Description
RF Micro Devices, Inc. was incorporated under the laws of the State of North Carolina in 1991. We are a recognized global leader in the design and manufacture of high-performance radio frequency (RF) components and compound semiconductors. Our products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), cable television (CATV)/broadband and aerospace and defense markets. We are recognized for our diverse portfolio of semiconductor technologies and RF systems expertise and we are a preferred supplier to the worlds leading mobile device, customer premises and communications equipment providers. Our design and manufacturing expertise encompasses all major applicable semiconductor process technologies, which we access through both internal and external resources. We are the worlds largest manufacturer of gallium arsenide (GaAs)-based compound semiconductors. We access silicon, silicon germanium (SiGe) and other technologies through leading foundries. Our broad design and manufacturing resources enable us to deliver products optimized for performance and cost in order to best meet our customers performance, cost and time-to-market requirements. In fiscal 2009, our Cellular Products Group (CPG) supplied essentially all of the leading handset original equipment manufacturers (OEMs) and original design manufacturers (ODMs). ...
Number of Employees 4,095
Peer Companies
NAICS Code Semiconductor and Related Device Manufacturing: 334413
Recent Events
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RF Micro upgraded to buy at UBS
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RFMD Announces Major Gallium Nitride GaN Milestones
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RF Micro Devices Completes Restructuring; Expects To Be Net Cash Positive In FY11 - Update
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RFMD Introduces Frequency Converter IC
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Market Skepticism Over Recovery Likely To Keep Sentiment Subdued - RTTNews Daily Market Analysis
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Northland Securities Initiates Coverage on RF Micro Devices RFMD with an Outperform
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QCOM, HBAN, SYMC, RFMD, TLCR, MXIM With Highest Daily Short Volume On
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52.71% Of All NASDAQ BX Trading Monday Was Short Selling. MXIM, BSX, CSCO, RFMD, AMD,...
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RFMD Introduces GSM/GPRS PA Module For TRP Performance
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RFMDR Delivers Significantly Improved Operating Results and Cash Flow
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RF Micro to work on solar cells
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RFMD And U.S. Department Of Energy's National Renewable Energy...
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RFMD® Introduces Highly Integrated, Multi-Use VCO For...
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Power amp fit Wi-Fi, WiMAX apps
News & Analysis
Filter by
amplifier and rf micro devices - All News and Analysis
RF Micro Devices Announces Availability of GaAs HBT Driver Power Amplifiers for Cellular Base Station Infrastructure.
- 2004-06-09
FORT WORTH, Texas, Jun 9, 2004 CCNMatthews via COMTEX RF Micro Devices, Inc. (Nasdaq: RFMD): RFMD's Multi-Band RF3800 Series Of Driver PAs -- Provides Higher Breakdown Voltage For Superior Output Power, Efficiency And Linearity -- Assembled In...
RFMD'S Transmit Upconverter Features Buffered Output and Double-Balanced Mixer
- 1997-11-11
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 11, 1997--RF Micro Devices, Inc. (NASDAQ:RFMD) has developed the RF2608 upconverter for use in CDMA/FM cellular applications. This complete upconverter contains both a double-balanced mixer stage and an output buffer amplifier stage. The mixer is a Gilbert cell with emitter degeneration resistors to...
Rfmd's High-Efficiency Hbt Cdma Power Amplifier Maximizes Talk Time
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. introduces the RF 2108, a new high-efficiency linear power amplifier for code divisional multiple access CDMA applications. Operating from a single position power supply, the power amp delivers the best overall performance of any CDMA PA on the commercial market. Previous CDMA...
New Rf 2104 Power Amplifier Combines Power, Efficiency And Economy
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. now offers the RF 2104 power amp, a very robust 700mW Class C amplifier. The component, manufactured using silicon bipolar technology, is available in a16-pin quad batwing SOIC plastic package. Operating with a frequency range of 400 MHz...
Rfmd Power Amplifier Offers High Efficiency And Digitally Controlled Output
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. implements advanced GaAs HBT technology in its new RF 2155 programmable gain power amplifier. Designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz, the RF 2155 operates from a...
Rf 2310 Features High Linearity And Low Cost For Voice And Data Communication
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. announces the RF 2310 - a general purpose, low-cost, high linearity RF amplifier IC. Using advanced gallium arsenide heterojunction bipolar transistor GaAs HBT technology, RFMD has designed the RF 2310 for use as an easily cascadable 50 gain block. ...
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RF Micro Devices
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