TOKYO -- Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today the development of a high power amplifier with InGaP HBT,1 the MGFS39E2527, for fixed-line WiMAX2 communication terminals in subscriber lines. The amplifier achieves top-level performance with high output power and low distortion. Sample shipment begins August 20, 2008.
WJ Communications, Inc. (NASDAQ: WJCI), a leading designer and supplier of RF solutions for the wireless infrastructure and RFID reader markets, today announced the AP512 -- 8W Power Amplifier for UMTS and the AP513 -- 8W Power...
Communications & Power Industries, Inc. CPI-Has received an initial award for satellite-communications satcom amplifiers to support the General Dynamics SATCOM Technologies specialized satcom earth terminals for Increment One of the US Army's Communications & Power Industries, Inc. CPI-Has received an initial award for satellite-communications satcom amplifiers to support the General...
RARITAN, N.J. -- Wi-Tron, Inc. (OTCBB: WTRO), a manufacturer of ultra-linear high power amplifiers and high speed broadband wireless products, today announced that it received new purchase orders from an Asian customer for the company's UMTS2100 and GSM1800 Multi-Channel Ultra Linear amplifiers. These initial orders are expected to generate about...
Two traveling wave tube amplifiers, designed for applications where wide instantaneous bandwidth, high gain, and high power output are required, provide 125-W CW. The Model 125T18G26 covers the 18- to 26.5-GHz range and the Model 125T26G40 from 26.5 Two traveling wave tube amplifiers, designed for...
NORWOOD, Mass. -- New low noise rail-to-rail operational amplifiers leverage ADI's iCMOSTM manufacturing process and DigiTrimR technology to provide performance and cost advantages
Snell & Wilcox aim to enhance TV quality Snell & Wilcox said it plans this week to introduce three products designed to enhance mobile TV services quality and reduce bandwidth requirements. The company specializes in image...
ENGINEERS FREQUENTLY use operational amplifiers to drive ADCs because of their low output impedance. In this role, an amplifier isolates impedances in the signal chain. You can add other features, such as gain and filtering, around the amplifier to ENGINEERS FREQUENTLY use operational amplifiers...
The Rack Integrated System for various EMC and EW applications includes a 50-W amplifier for frequencies from 0.5 to 2.0 GHz and 300-W amplifiers for frequencies from 2 to 18 GHz. It can be tailored to meet specific ... The Rack Integrated System for...
The LMH6550 and LMH6551 are high-performance voltage feedback differential amplifiers. The fully differential topology allows balanced inputs to the ADCs and can be used as single-ended-to-differential or used as differential-to-differential. These The LMH6550 and LMH6551 are high-performance voltage feedback differential amplifiers. The fully...
The LMH6550 and LMH6551 are high-performance voltage feedback differential amplifiers. The fully differential topology allows balanced inputs to the ADCs and can be used as single-ended-to-differential or used as differential-to-differential. These The LMH6550 and LMH6551 are high-performance voltage feedback differential amplifiers. The fully...
Tokyo, Japan, Aug 18, 2006 - JCN Newswire - NEC Corporation today announced the successful development of a compact gallium nitride (GaN, 1*) power transistor amplifier, which boasts the world's highest output power level of 400W while featuring low-distortion characteristics, for third generation (3G) base stations. This amplifier is...
National Semiconductor's LM4851--a tiny, 12-bump micro-SMD, three-channel amplifier--routes one monophonic and one stereophonic input to an on-chip monophonic-speaker amplifier or stereo-headphone amplifier in any combination. The same 3-bit " National Semiconductor's LM4851--a tiny, 12-bump micro-SMD, three-channel amplifier--routes one monophonic and one stereophonic ...
TOKYO -- Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today it has finished development of a high output Indium Gallium Phosphide Heterojunction Bipolar Transistor InGaP HBT1, and will begin sample shipment on December 15, 2006. The amplifiers are for WiMAX2 terminals used in mobile and domestic markets, and...
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