BNET Industries
Market Cap:$1.3B
Last Fiscal Year Sales:$956.2M
- Public
- US
Dow Jones Description
RF Micro Devices, Inc. was incorporated under the laws of the State of North Carolina in 1991. We are a recognized global leader in the design and manufacture of high-performance radio frequency (RF) components and compound semiconductors. Our products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), cable television (CATV)/broadband and aerospace and defense markets. We are recognized for our diverse portfolio of semiconductor technologies and RF systems expertise and we are a preferred supplier to the worlds leading mobile device, customer premises and communications equipment providers. Our design and manufacturing expertise encompasses all major applicable semiconductor process technologies, which we access through both internal and external resources. We are the worlds largest manufacturer of gallium arsenide (GaAs)-based compound semiconductors. We access silicon, silicon germanium (SiGe) and other technologies through leading foundries. Our broad design and manufacturing resources enable us to deliver products optimized for performance and cost in order to best meet our customers performance, cost and time-to-market requirements. In fiscal 2009, our Cellular Products Group (CPG) supplied essentially all of the leading handset original equipment manufacturers (OEMs) and original design manufacturers (ODMs). ...
Number of Employees 4,095
Peer Companies
NAICS Code Semiconductor and Related Device Manufacturing: 334413
Recent Events
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Skymark Research Initiates Independent Research Coverage on RF Micro Devices, Inc.
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RF Micro upgraded to buy at UBS
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RFMD Announces Major Gallium Nitride GaN Milestones
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RF Micro Devices Completes Restructuring; Expects To Be Net Cash Positive In FY11 - Update
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RFMD Introduces Frequency Converter IC
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Market Skepticism Over Recovery Likely To Keep Sentiment Subdued - RTTNews Daily Market Analysis
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Northland Securities Initiates Coverage on RF Micro Devices RFMD with an Outperform
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QCOM, HBAN, SYMC, RFMD, TLCR, MXIM With Highest Daily Short Volume On
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52.71% Of All NASDAQ BX Trading Monday Was Short Selling. MXIM, BSX, CSCO, RFMD, AMD,...
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RFMD Introduces GSM/GPRS PA Module For TRP Performance
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RFMDR Delivers Significantly Improved Operating Results and Cash Flow
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RF Micro to work on solar cells
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RFMD And U.S. Department Of Energy's National Renewable Energy...
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RFMD® Introduces Highly Integrated, Multi-Use VCO For...
News & Analysis
Filter by
business wire and rf micro devices - All News and Analysis
RFMD'S Transmit Upconverter Features Buffered Output and Double-Balanced Mixer
- 1997-11-11
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 11, 1997--RF Micro Devices, Inc. (NASDAQ:RFMD) has developed the RF2608 upconverter for use in CDMA/FM cellular applications. This complete upconverter contains both a double-balanced mixer stage and an output buffer amplifier stage. The mixer is a Gilbert cell with emitter degeneration resistors to...
RFMD Introduces 10dB Switched Attenuator
- 1997-06-10
DENVER--BUSINESS WIRE--June 10, 1997--RF Micro Devices, Inc., attending the 1997 IEEE MTT-S International Microwave Symposium/Exhibition here, has introduced the RF2421, a monolithic CMOS programmable switched attenuator ideally suited for communications systems that require RF power control by digital means. The RF2421, manufactured using GaAs MESFET process technology,...
PCS LNA/MIXER FAMILY USES GaAs HBT TO DELIVER HIGH PERFORMANCE AT LOW COST
- 1996-12-20
GREENSBORO, N.C.--BUSINESS WIRE--Dec. 20, 1996--RF Micro devices, Inc. introduces the RF9936 and the RF9986, a pair of high-performance fully monolithic gallium arsenide heterojunction bipolar transistor GaAs HBT LNA/mixer products designed to address spread spectrum PCS applications in the North American band from 1930MHz - 1990MHz. The RF9936...
Rfmd Introduces Low-Cost Ism Band Fsk Transmitter With Direct Binary Fsk Modulation
- 1996-12-20
GREENSBORO, N.C.--BUSINESS WIRE--Dec. 20, 1996--RF Micro Devices, Inc. announces the availability of the RF9901, a monolithic integrated circuit designed for use as a low-cost FSK transmitter with output power up to +2dBm. With its operating range of 400MHz - 930MHz, the RF 9901 is suited to both European (433MHz)...
Rf Micro Devices Introduces Low-Cost Fsk Receiver Designed For European And Us Ism Band
- 1996-12-20
GREENSBORO, N.C.--BUSINESS WIRE--Dec. 20, 1996--RF Micro Devices, Inc. introduces the RF9902, a monolithic integrated circuit designed for use as a low-cost FSK receiver with CMOS level compatible outputs. Designed to work independently or as part of an FSK transceiver when used in conjunction with RFMD's FSK transmitter...
Rfmd's High-Efficiency Hbt Cdma Power Amplifier Maximizes Talk Time
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. introduces the RF 2108, a new high-efficiency linear power amplifier for code divisional multiple access CDMA applications. Operating from a single position power supply, the power amp delivers the best overall performance of any CDMA PA on the commercial market. Previous CDMA...
New Rf 2104 Power Amplifier Combines Power, Efficiency And Economy
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. now offers the RF 2104 power amp, a very robust 700mW Class C amplifier. The component, manufactured using silicon bipolar technology, is available in a16-pin quad batwing SOIC plastic package. Operating with a frequency range of 400 MHz...
Rfmd Power Amplifier Offers High Efficiency And Digitally Controlled Output
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. implements advanced GaAs HBT technology in its new RF 2155 programmable gain power amplifier. Designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz, the RF 2155 operates from a...
Combination Oscillator/Buffer Amp Simplifies Lo Design Process
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. has introduced the RF 2501, a low current, low power integrated combination oscillator/buffer amplifier that streamlines the task of designing an LO for wireless applications. Designed for applications where battery power conservation is important, the RF 2501 features an...
Rf 2310 Features High Linearity And Low Cost For Voice And Data Communication
- 1996-11-13
GREENSBORO, N.C.--BUSINESS WIRE--Nov. 13, 1996--RF Micro Devices, Inc. announces the RF 2310 - a general purpose, low-cost, high linearity RF amplifier IC. Using advanced gallium arsenide heterojunction bipolar transistor GaAs HBT technology, RFMD has designed the RF 2310 for use as an easily cascadable 50 gain block. ...
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Industry Transcripts by Seeking Alpha
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National Semiconductor F2Q10 (Qtr End 11/30/09) Earnings Call Transcript
on Dec 10, 2009about NSM
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White Electronic Designs Corp. F4Q09 (Qtr End 09/30/09) Earnings Call Transcript
on Dec 10, 2009about WEDC
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IDT Corporation F1Q10 (Qtr End 10/31/09) Earnings Call Transcript
on Dec 10, 2009about IDT
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NaviSite, Inc. F1Q10 (Qtr End 10/31/09) Earnings Call Transcript
on Dec 10, 2009about NAVI
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Methode Electronics Inc. F2Q10 (Qtr End 31/10/09) Earnings Call Transcript
on Dec 10, 2009about MEI
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