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	<title><![CDATA[capacitance Resources | BNET]]></title>
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	<description><![CDATA[White papers, case studies, business articles, and blog posts relating to capacitance]]></description>
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		<title><![CDATA[ESD Simulator]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4797/is_11_46/ai_n29392645]]></link>
		<description><![CDATA[The NSG 437 ESD Simulator meets the holding time of at least 5 s required by the global ESD standards. During air- and contact-discharge operation, it generates pulses of 200 V to 30 kV. The simulator features interchangeable network modules with resistance values from 0[ohm] and a capacitance up to...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 01 Nov 2007 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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		<title><![CDATA[Integrating passives: to save real estate and enhance reliability, even the DoD is embedding parts]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb5118/is_8_18/ai_n29368551]]></link>
		<description><![CDATA[While commercial electronics manufacturers typically drive technology trends, the Department of Defense is actively pursuing methods to reduce the size, weight and cost of its high-reliability electronics, particularly in mobile RF applications. Complex RF modules may require a high number of top-performing passives. These critical passives may in turn consume...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 01 Aug 2007 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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	<item>
		<title><![CDATA[Dual-display DMM]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4797/is_10_45/ai_n29299218]]></link>
		<description><![CDATA[The Model 2890A 51,000-count dual-display DMM is hand held and battery powered. It measures true RMS ACV, ACA, and AC+DC. Model 2890A has a five-digit LCD for primary and secondary displays, a 21-segment analog bar graph, automatic polarity indicator, and data hold. It measures resistance to 500 M[ohm], conductance to...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sun, 01 Oct 2006 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/australian+communications+authority.html"><![CDATA[Australian Communications Authority]]></category>
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	<item>
		<title><![CDATA[New Semtech Protection Device Offers Low Capacitance for HDMI-Enabled Products; Four-Line RClamp0544M Features Capacitance of 0.3pF Yet Still Delivers IEC-Standard ESD, EFT and CDE Protection]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2006_May_11/ai_n26859100]]></link>
		<description><![CDATA[CAMARILLO, Calif. -- Semtech Corp. (Nasdaq:SMTC), a leading supplier of analog and mixed-signal semiconductors for communications, portable devices, computers, and industrial equipment, today announced the RClamp0544M, a four-line protection device with the low capacitance and high protection levels necessary for high-definition multimedia interface HDMI and digital visual interface DVI enabled...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 11 May 2006 00:00:00 -0700</pubDate>
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		<title><![CDATA[2012 X5R 47[micro]F MLCC now available.]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4799/is_200510/ai_n17438113]]></link>
		<description><![CDATA[Samsung Electro-Mechanics Samsung has completed development of an  MLCC with the highest capacitance, 47[micro]F in a 2012 case size with  an X5R dielectric (-55 [degrees] C to 85 [degrees] C, capacitance change  [+ or -] 15%). The device features out  Samsung Electro-Mechanics Samsung has completed development...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sat, 01 Oct 2005 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/c.html"><![CDATA[C]]></category>
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		<title><![CDATA[2012 X5R 47[micro]F MLCC now available.]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4799/is_200509/ai_n17438201]]></link>
		<description><![CDATA[Samsung Electro-Mechanics Samsung has completed development of an  MLCC with the highest capacitance, 47 [micro]F in a 2012 case size with  an X5R dielectric (-55[degrees]C to 85[degrees]C, capacitance change [+  or -] 15%). The device features outsta  Samsung Electro-Mechanics Samsung has completed development of an ...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 01 Sep 2005 00:00:00 -0700</pubDate>
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		<title><![CDATA[Boost precision and accuracy with single chip capacitance- and impedance-to-digital converters.(Leading inside: A series of engineering insights by Analog Devices.)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4804/is_200507/ai_n17518636]]></link>
		<description><![CDATA[High precision capacitance- and impedance-sensing applications  traditionally required a complex collection of discrete components that  needed to be skillfully combined together to provide an overall  measurement solution. Not only was this time cons    High precision capacitance- and impedance-sensing applications  traditionally required a complex...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 21 Jul 2005 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/analog+devices+inc..html"><![CDATA[Analog Devices Inc.]]></category>
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		<title><![CDATA[Recognition for Aus nanotech company.(Brief Article)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4692/is_200503/ai_n17637327]]></link>
		<description><![CDATA[Mar 20, 2005 (Electronics News - ABIX via COMTEX)    Australian-based nanotechnology company Cap-XX has been named a  "2005 Technology Pioneer" at the World Economic Forum. The  company was praised for initiating and applying the most innovative  technologies. Cap-XX was one of the first companies...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 21 Mar 2005 23:59:59 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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		<title><![CDATA[3M Intros Better Embedded Capacitance Material (Electronic News)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb5934/is_200502/ai_n23917347]]></link>
		<description><![CDATA[Austin, Texas-based 3M unveiled today what it says is an improved embedded capacitance material with a dielectric thickness of 8 microns and a capacitance density over 11 nanofarads / square inch.      Austin, Texas-based 3M unveiled today what it says is an improved embedded capacitance material...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 21 Feb 2005 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/3m+co..html"><![CDATA[3M Co.]]></category>
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		<title><![CDATA[3M Introduces Thinner Embedded Capacitance Material for High-Performance Circuit Boards]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2005_Feb_15/ai_n9535140]]></link>
		<description><![CDATA[AUSTIN, Texas -- 3M announced today that it has developed an improved embedded capacitance material that has a dielectric thickness of 8 microns and a capacitance density over 11 nanofarads per square inch, which makes it among the thinnest and highest capacitance density materials available for embedding planar capacitance in...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Tue, 15 Feb 2005 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/3m+co..html"><![CDATA[3M Co.]]></category>
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		<title><![CDATA[3M to Present Paper on Embedded Capacitance and Board Level Reliability at IPC Second International Conference on Embedded Passives]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2004_June_3/ai_n6053497]]></link>
		<description><![CDATA[Business Editors]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 03 Jun 2004 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/3m+co..html"><![CDATA[3M Co.]]></category>
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		<title><![CDATA[EMI filter array offers ESD protection.(Microwave & RF Components)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4822/is_200310/ai_n17560440]]></link>
		<description><![CDATA[The CSPE-M1608 low capacitance EMI filter array from California  Micro Devices is designed for LCD data line filtering applications. It  is offered in an eight-channel configuration for high speed LCD data  lines that bridge the two folding sections of   The CSPE-M1608 low capacitance EMI filter...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 01 Oct 2003 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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		<title><![CDATA[Application of an SOI 0.12-5m CMOS technology to SoCs with low-power and high-frequency circuits]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3751/is_200309/ai_n9248870]]></link>
		<description><![CDATA[Systems-on-chips SoCs that combine digital and high-speed communication circuits present new opportunities for power-saving designs. This results from both the large number of system specifications that can be traded off to minimize overall power and the inherent low capacitance of densely integrated devices. As shown in this paper, aggressively scaled...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 01 Sep 2003 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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		<title><![CDATA[Wide tuning range RF-MEMS varactors fabricated using the polyMUMPs foundry.(Technical Feature)(RF-microelectromechanical system variable capacitors, Polysilicon Multi-user MEMS Process)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb6601/is_200308/ai_n26007628]]></link>
		<description><![CDATA[Semiconductor varactor diodes are widely used throughout the  electromagnetic spectrum, but their performance limits their  applications. One technology being pursued by industry and academia as a  potential solution to these problems is RF-MEMS varactors. This article  introduces the reader to fundamental device research conducted at McGill...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Fri, 01 Aug 2003 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/capacitance.html"><![CDATA[capacitance]]></category>
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		<title><![CDATA[Foundation of rf CMOS and SiGe BiCMOS technologies]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3751/is_200303/ai_n9180060]]></link>
		<description><![CDATA[This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors HBTs combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip SoC. The paper reviews the process development and...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sat, 01 Mar 2003 23:59:59 -0800</pubDate>
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		<title><![CDATA[Low-power circuits and technology for wireless digital systems]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3751/is_200303/ai_n9180119]]></link>
		<description><![CDATA[As CMOS technology scales to deep-submicron dimensions, designers face new challenges in determining the proper balance between aggressive high-performance transistors and lower-performance transistors to optimize system power and performance for a given application. Determining this balance is crucial for battery-powered handheld devices in which transistor leakage and active power limit...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sat, 01 Mar 2003 23:59:59 -0800</pubDate>
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		<title><![CDATA[Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3751/is_200303/ai_n9180151]]></link>
		<description><![CDATA[The rapidly expanding telecommunications market has led to a need for advanced rf integrated circuits. Complex rf- and mixed-signal system-on-chip designs require accurate prediction early in the design schedule, and time-to-market pressures dictate that design iterations be kept to a minimum. Signal integrity is seen as a key issue in...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sat, 01 Mar 2003 23:59:59 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/burlington.html"><![CDATA[Burlington]]></category>
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		<title><![CDATA[Capacitance keys security]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3739/is_200301/ai_n9216276]]></link>
		<description><![CDATA[San Jose, Calif.-Having missed your opportunity to invest in the hula hoop and burned by the dot.com run-up and collapse, you might be on the make for a product that rocks and a stock that'll roll. High technology research firm Frost & Sullivan is predicting that silicon-based fingerprint sensors will...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 01 Jan 2003 23:59:59 -0800</pubDate>
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		<title><![CDATA[Aerogel supercapacitors combine properties of batteries and capacitors. (Passive & Discrete Components).]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4822/is_200211/ai_n17554667]]></link>
		<description><![CDATA[The PowerStor[R] P Series from Cooper features low ESR 5 V aerogel  supercapacitors with values ranging from 0.1 F to 1.0 F. This series  combines the features of high energy rechargeable batteries and high  power electrolytic capacitors. Two types are available: the low ESR,  high power...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Fri, 15 Nov 2002 23:59:59 -0800</pubDate>
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		<title><![CDATA[Cooper combines the best of batteries and capacitors]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_qa3864/is_200210/ai_n9111423]]></link>
		<description><![CDATA[Cooper Electronic Technologies' PowerStorR P Series features low equivalent series resistance ESR 5V aerogel supercapacitors with value ranges from 0.1F to 1.0F. It combines the best features of high-energy rechargeable batteries and high-power electrolytic capacitors. Two types are available, the low ESR, high-power PA Series with ESR values ranging from...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Tue, 01 Oct 2002 23:59:59 -0700</pubDate>
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