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• AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO^sub 2^ gate oxide

  - 2003-05-01

  High-quality SiO^sub 2^ was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D^sub 2^ lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors MOSHFETs were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs MESHFETs with similar structure, we found...

  Tags: deposition, HARDWARE, IEEE, lamp, O2 Plc., Sanmina-SCI Corp., Semiconductors, substrate, transistor

• Curing kinetics of anisotropic conductive adhesive film

  - 2003-03-01

  Polymer-based conductive-adhesive materials have become widely used in many electronic packaging interconnect applications, such as chip-on-glass, chip-on-flex, etc. Among all the conductive-adhesive materials, anisotropic conductive adhesive film ACF is an attractive interconnect material because of its fine pitch capability. Anisotropic conductive-adhesive film is a thermosetting, epoxy matrix impregnated with a...

  Tags: epoxy, IEEE, polymer, Sanmina-SCI Corp.

• Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

  - 2002-05-01

  Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with "wet" and "dry" gate oxides. While the field-effect mobilities were approximately 3-5 cm^sup 2^/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70-80 cm^sup 2^/Vs. The dry-oxidized metal oxide...

  Tags: IEEE, mobility, Sanmina-SCI Corp.

• Reliability limits for the gate insulator in CMOS technology

  - 2002-03-01

  Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the quality and reliability of ultrathin dielectrics to assume greater importance. This paper reviews the physics and statistics of dielectric wearout and breakdown in ultrathin SiO 2-based gate dielectrics. Estimating reliability requires an extrapolation from the...

  Tags: CMOS, electron, HARDWARE, hydrogen, IEEE, injection, M., Sanmina-SCI Corp., Semiconductors, silicon

• Formation of ohmic contracts to (alpha)-SiC and their impact on devices

  - 2001-10-01

  The history of power electronic semiconductor devices is reviewed that leads to a discussion of new materials. The wide bandgap and good thermal conductivity of SiC permit its use at high temperatures, and the high electric field breakdown is favorable for high power devices. However, there remain a number of...

  Tags: HARDWARE, IEEE, Sanmina-SCI Corp., Semiconductors

• Correlation between excess Si atoms near the ultrathin silicon oxide-Si(100) interface and oxidation temperature

  - 2001-08-01

  The number densities areal densities of Si and O atoms for 3.5-8.0-nm-thick silicon oxide films on Si(100) oxidized at 800-950 deg C were determined by Rutherford backscattering spectrometry. It was confirmed that excess Si atoms relative to the stoichiometric SiO^sub 2^ composition exist near the oxide film-Si substrate interface and...

  Tags: HARDWARE, IEEE, Sanmina-SCI Corp., Semiconductors, silicon

• High-pressure bridgeman grown CdZnTe for electro-optic applications

  - 2001-06-01

  The linear electro-optic response of high pressure Bridgman growth semiinsulating Cdo^sub 0.9^,Zn 0.1^Te bulk samples has been characterized. Measurements have been performed in the third optical window for telecommunications around lambda = 1.5 mum. The dependence of the Pockels figure of merit on the modulation frequency and on the intensity...

  Tags: Construction, electron, HARDWARE, IEEE, NETWORKING, Sanmina-SCI Corp., Semiconductors, TELECOMMUNICATIONS, Telephony

• Effect of processing conditions on inversion layer mobility and interface state density in 4H-Sic MOSFETs

  - 2001-03-01

  N-channel, inversion mode MOSFETs have been fabricated on 4H-SiC using different oxidation procedures, source/drain implant species and implant activation temperature. The fixed oxide charge and the field-effect mobility in the inversion layer have been extracted, with best values of 1.8 x 10^sup 12^ cm^sup -2^ and 14 cm^sup 2^ /V-s,...

  Tags: IEEE, mobility, Sanmina-SCI Corp.

• Using high-temperature superconductors for levitation application

  - 1999-07-01

  Melt-textured, bulk high-temperature superconductors are finding increasing uses in superconducting bearings, flywheel energy storage, and other levitational applications. This article reviews the use of these materials in magnetic-levitation applications. The behavior of levitational force, stiffness, damping, and rotational losses is discussed. INTRODUCTION The image of a...

  Tags: grain, IEEE, millimeter, Sanmina-SCI Corp.

• Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

  - 1999-05-01

  The incorporation of nitrogen N atoms into ultrathin gate dielectrics 1) at monolayer levels at Si-SiO^sub 2^ interfaces reduces tunneling current and defect generation; 2) in bulk nitrides, as in oxide-nitride-oxide ONO or oxide-nitride ON composite structures, allows the use of physically thicker films without reduced capacitance compared to single-layer...

  Tags: atom, C, deposition, electrode, IEEE, performance, plasma, Sanmina-SCI Corp., silicon, substrate