Resources
BNET Resources
- sort by:
- Relevance
- Date
- Popularity
- Frost & Sullivan Recognizes Sanderson Engine Development
- Rapid Market Growth Backed by Pioneering SRAM Technology PALO ALTO, Calif. -- Based on its recent analysis of the power supplies market, Frost & Sullivan recognizes Sanderson Engine Development, LLC SED with the 2008 North American Frost & Sullivan Award for Emerging Company of the Year. By designing the...
- Research articles 2008-07-29
- MoSys To Announce Third Quarter 2007 Financial Results
- SUNNYVALE, Calif. -- MoSys, Inc., (NASDAQ: MOSY), a leading provider of high-density system-on-chip SoC memory and analog/mixed-signal intellectual property IP, today announced it would release its third quarter 2007 financial results for the period ending September 30, 2007 on Tuesday, October 30, 2007, after the market closes. Following the release,...
- Research articles 2007-10-10
- Need for Smaller, High-speed, Ultra-high Density, Storage Devices Fostering Advances in Embedded Memories.
- M2 PRESSWIRE-29 May 2007-Research and Markets: Need for Smaller, High-speed, Ultra-high Density, Storage Devices Fostering Advances in Embedded MemoriesC1994-2007 M2 COMMUNICATIONS LTD RDATE:29052007 Dublin: Research and Markets (http://www.researchandmarkets.com/reports/c58260) has announced the addition of the Frost & Sullivan report: Advances in...
- Research articles 2007-05-29
- MoSys to Announce First Quarter 2007 Financial Results
- SUNNYVALE, Calif. -- MoSys, Inc., (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip SoC embedded memory intellectual property IP, today announced it would release its first quarter 2007 financial results for the period ending March 31, 2007 on Tuesday, May 1, 2007 after the market closes. Following the release,...
- Research articles 2007-04-23
- SRAM Corp. Recalls Bicycle Brake Caliper Sets Due to Crash Hazard
- To: RETAILING EDITORSContact: CPSC Media Contact, +1-301-504-7908 WASHINGTON, April 10 /PRNewswire-USNewswire/ -- The U.S. Consumer Product Safety Commission, in cooperation with the firm named below, today announced a voluntary recall of the following consumer product. Consumers should stop using recalled products immediately unless otherwise instructed. (To access color photos of...
- Research articles 2007-04-10
- Innovative Silicon Inc. Selected by Embedded Systems Conference for New "Disruption Zone"
- Z-RAM([R]) Memory Technology to be Recognized at IEEE Spectrum "Winning Technology" Luncheon and EE Times' ACE Awards Gala SANTA CLARA, Calif. -- Innovative Silicon ISi, the developer of Z-RAM high-density memory intellectual property IP, announced today that it has been selected to exhibit in the Disruptive Zone in booth...
- Research articles 2007-03-21
- U.S. is looking into Sony SRAM sales
- TOKYO -- Sony said Tuesday the U.S. Department of Justice is probing its electronics unit as part of an industrywide investigation into sales of a particular type of memory chip. The news could spell more trouble for a company already stung by sinking profits, a global battery recall and product...
- Research articles 2006-11-01
- Sony Corp. says U.S. Justice Department is probing its electronics
- TOKYO -- Sony said Tuesday that the U.S. Department of Justice is probing its electronics unit as part of an industrywide investigation into sales of a type of memory chip. The news could spell more trouble for a company already stung by sinking profits, a global battery recall and product...
- Research articles 2006-10-31
- MoSys and UniRAM Settle Patent Litigation
- SUNNYVALE, Calif. -- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip SoC embedded memory solutions, announced that it has settled all outstanding litigation with UniRAM Technology Inc. related to the trade secret misappropriation and patent infringement suit filed in 2004 by UniRAM. Under the settlement agreement,...
- Research articles 2006-10-26
- MoSys To Announce Third Quarter 2006 Financial Results
- SUNNYVALE, Calif. -- MoSys, Inc., (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip SoC embedded memory intellectual property IP, today announced it would release its third quarter 2006 results for the period ending September 30, 2006 on Thursday, October 26, 2006 after the market closes. Following the release, the...
- Research articles 2006-10-12
- Monolithic System Technology, Inc. Appoints James Pekarsky as Chief Financial Officer
- SUNNYVALE, Calif. -- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip SoC embedded memory solutions announced today the appointment of Jim Pekarsky as its Vice President of Finance and Chief Financial Officer CFO. Mr. Pekarsky will be responsible for all financial and administrative aspects of the company...
- Research articles 2006-03-24
- Naked Short Web Site Announces HDTV, MEK, TKO, XPNG, VCYA, SRAM Have Been Removed From Threshold Lists Today.
- M2 PRESSWIRE-23 September 2005-BUYINS.NET: Naked Short Web Site Announces HDTV, MEK, TKO, XPNG, VCYA, SRAM Have Been Removed From Threshold Lists TodayC1994-2005 M2 COMMUNICATIONS LTD RDATE:23092005 www.buyins.net, announced today that these select companies have been removed from the NASDAQ, AMEX and...
- Research articles 2005-09-23
- XTLB, CEPO, PRNW, SENR, SRAM Have Also Been Added To Naked Short Lists Today.
- M2 PRESSWIRE-15 September 2005-BUYINS.NET: XTLB, CEPO, PRNW, SENR, SRAM Have Also Been Added To Naked Short Lists TodayC1994-2005 M2 COMMUNICATIONS LTD RDATE:15092005 www.buyins.net, announced today that these select companies have been added to the NASDAQ, AMEX and NYSE naked short threshold...
- Research articles 2005-09-15
- Renesas Technology Develops Technique that Overcomes Effects of Threshold Variation to Stabilize the Operation of Embedded SRAM Built with 65nm Process
- TOKYO & HONOLULU -- High Yield Achieved for the World's Smallest Level 6-transistor SRAM Memory-Cell Area (0.494um2); Stabilization Technique Addresses Variability of Transistor Characteristics
- Research articles 2006-06-15
- Sony named in SRAM probe.(static random access memory )(Brief article)
- By Staff By Staff
- Research articles 2006-11-16
- UNCLE SAM PROBES SRAMS.(Cypress Semiconductor Corp., Samsung Semiconductor Inc. and Mitsubishi Semiconductor America Inc. under investigation for static random access memory chips)(Brief article)
- By Staff Department of justice's antitrust division has opened an investigation into price-fixing among makers of static random access memory SRAM ... By Staff Department of justice's antitrust division has opened an ...
- Research articles 2006-11-02
- Ultralow-power SRAM technology
- An ultralow-standby-power technology has been developed in both 0.18-µm and 0.13-µm lithography nodes for embedded and standalone SRAM applications. The ultralow-leakage sixtransistor (6T) SRAM cell sizes are 4.81 µm^sup 2^ and 2.34 µm^sup 2^, corresponding respectively to the 0.18-µm and 0.13-µm design dimensions. The measured array standby leakage is equal...
- Research articles 2003-09-01
- Review and future prospects of low-voltage RAM circuits
- This paper describes low-voltage random-access memory RAM cells and peripheral circuits for standalone and embedded RAMs, focusing on stable operation and reduced subthreshold current in standby and active modes. First, technology trends in low-voltage dynamic RAMs DRAMs and static RAMs SRAMs are reviewed and the challenges of low-voltage RAMs in...
- Research articles 2003-09-01
- Industry's smallest 16 Mb low-power SRAM.(Electronics)(Renesas Technology Corporation)(Brief Article)(Company Profile)
- Renesas Technology Corporation has commercialized the development of a range of low-power static random access memory SRAM products, called "superSRAM". Renesas Technology Corporation has commercialized the development of a range of low-power static random access memory SRAM products, called "superSRAM".
- Research articles 2003-10-01
- Toshiba develops 128-megabit pseudo SRAMs. (Electronics).(pseudo static random access memory )(Brief Article)
- Toshiba Corporation has developed the world's first 128-megabit Mb Pseudo static random access memory SRAM. The products integrate a dynamic random access memory DRAM-based cell with an SRAM interface. Toshiba Corporation has developed the world's first 128-megabit Mb Pseudo static random access memory...
- Research articles 2003-03-01
- << Previous
- page 1 of 8
- Next >>
Refining Tags
- Hardware (44 results)
- Memory (43 results)
- Semiconductors (43 results)
- Components (43 results)
- Cypress Semiconductor Corp. (31 results)
- Business Wire (16 results)
- marketing (15 results)
- DRAM (12 results)
- Toshiba Corp. (11 results)
- Nasdaq Stock Market Inc. (10 results)
- network (9 results)
- chip (9 results)
- Micron Technology Inc. (9 results)
- high-density (7 results)
- Mitsubishi Corp. (7 results)
- NEC Corp. (7 results)
- Motorola Inc. (7 results)
- FINANCE (7 results)
- technology (6 results)
- Sunnyvale (6 results)
- FPGA (6 results)
- Hitachi Ltd. (6 results)
- Sony Corp. (6 results)
- CMOS (6 results)
- Fujitsu Ltd. (6 results)
- IDT Corp. (6 results)
- Cell (5 results)
- IBM Corp. (5 results)
- MoSys Inc. (5 results)
- electronics (5 results)
- IEEE (5 results)
- sales (5 results)
- semiconductor (4 results)
- performance (4 results)
- Intel Corp. (4 results)
- Leadership (4 results)
- RAM (4 results)
- stock (4 results)
- Taiwan Semiconductor Manufacturing Co. Ltd. (3 results)
- National Semiconductor Corp. (3 results)
- Samsung Electronics Co. Ltd. (3 results)
- high-performance (3 results)
- Advanced Micro Devices Inc. (3 results)
- cell phone (3 results)
- team (3 results)
- revenue (3 results)
- telecommunications (3 results)
- Integrated Silicon Solution Inc. (3 results)
- U.S. Department of Justice (3 results)
- board (3 results)
