Resources
BNET Resources
- sort by:
- Relevance
- Date
- Popularity
- Moore’s Law and Electronic Games
- This paper is based on the Moore's Law that observes that the transistor density of a silicon chip will double every two years, allowing a corresponding increase in processor speed. The continuation of Moore's Law through 2010 implies significant more powerful processors by 2010. This in turn will enable the...
- White papers 2004-05-28
- Improved Electrical and Thermal Performance of Ultra-thin RF LDMOS Power transistors
- This paper presents the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a proprietary process, we fabricated such devices with a thickness as reduced as 40µm. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite element-analysis simulations. As...
- White papers 2002-12-09
- Circuit Yield of Organic Integrated Electronics
- This paper explores the manufacturability of organic digital circuits at a complexity level of 1000 transistors, which is enough to build tags. The feasibility of active matrix displays and digital circuits based on organic transistors has been demonstrated. To show that organic electronics has practical value it is now important...
- White papers 2002-09-04
- Comparison of SETs in Bipolar Linear Circuits Generated With an Ion Microbeam, Laser and Circuit Simulation
- This white paper presents the results of micro beam tests at Sandia Labs on two bipolar linear circuits and compares the results for the most sensitive transistors to the output single event transients (SETs) measured with a laser at NRL and simulated with SPICE The paper concludes that while the...
- White papers 2002-05-21
- An Electronic Ballast: Base Drive Optimization
- The transformer's auxiliary windings which provide base drive might contain just one or two turns each. In order to provide rapid transistor turn-off, their peak loaded output voltage would need to be such that the transistor 'sees' a turn-off voltage of around minus 5V. An approximation to this drive voltage...
- White papers 2002-01-04
- A Model for Single-Event Transients in Comparators
- This white paper deals with a two-step modeling approach that is developed for single-event transients in linear circuits that uses the PISCES device simulation program to calculate transient currents in key internal transistor structures. Those currents are then applied at the circuit level using the SPICE circuit analysis program. The...
- White papers 2001-02-07
- An Integrated Circuit/Architecture Approach to Reducing Leakage in Deep-Submicron High-Performance I-Caches
- This paper explores an integrated architectural and circuit-level approach to reducing leakage energy in instruction caches (icaches). Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Estimates suggest a five-fold increase in leakage energy in every future generation....
- White papers 2000-11-10
- Power MOSFET Basics
- Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices. The metal oxide semiconductor field effect transistor (MOSFET) is based on the original field-effect transistor introduced...
- White papers 2000-02-28
- Ambipolar Pentacene Field-Effect transistors and Inverters
- Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per...
- White papers 2000-02-11
Additional Resources
- Vishay to Present at the 2008 Merrill Lynch Technology Conference
- MALVERN, Pa. -- Vishay Intertechnology, Inc. (NYSE:VSH) announced today that David Ben-Bassat, Vice President of Research & Development and Peter Henrici, Senior Vice President Corporate Communications will present at the 2008 Merrill Lynch Technology Conference in New York City on Wednesday, May 7th at 3:45 PM ET. The conference will...
- Articles 2008-05-05
- 6-5 AGAINST
- In my time it used to be a dozen or so blokes with transistor radios pressed to their sweaty ears who would relay the news across the terraces. Now "real time" promotion and relegation updates are received via mobiles and hand-held computers. The final day of the...
- Articles 2008-05-03
- 6-5 AGAINST
- In my time it used to be a dozen or so blokes with transistor radios pressed to their sweaty ears who would relay the news across the terraces. Now "real time" promotion and relegation updates are received via mobiles and hand-held computers. The final day of the...
- Articles 2008-05-03
- 6-5 AGAINST
- In my time it used to be a dozen or so blokes with transistor radios pressed to their sweaty ears who would relay the news across the terraces. Now "real time" promotion and relegation updates are received via mobiles and hand-held computers. The final day of the...
- Articles 2008-05-03
- Photocouplers incorporate transistor output
- Supplied in 4-pin, 6.5 x 4.6 x 3.5 mm plastic DIP, general-purpose TLP781 consists of silicone photo-transistor optically coupled to gallium-arsenide IR emitting diode. Solution meets reinforced insulation class UL, BSI, SEMKO, and VDE international safety standard requirements; offers isolation voltage up to 5,000 V(rms); and has 7.62 mm lead...
- Articles 2008-05-02
- Software speeds wafer level reliability testing. Test System Now Completes Wafer Level Reliability Testing Up to Five Times Faster
- Building on single- and multi-site parallel test capabilities, ACS v4.0 includes database capability as well as software tools and optional licenses for Reliability Test Module and ACS Data Analysis capabilities. Wafer Level Reliability testing predicts reliable lifetimes for semiconductor components such as transistors, capacitors, and interconnects. WLR tools in ACS...
- Articles 2008-05-02
- Kopin Selected for Award of NASA Solar Cell Development Contract
- Indium Nitride-Based Quantum-Dot Solar Cells Potentially Provide High Efficiency and Resistance to Extreme Conditions TAUNTON, Mass. -- Kopin([R]) Corp. (NASDAQ: KOPN), the world's leading provider of heterojunction bipolar transistor (HBT) wafers for cellular phones and wireless local area networks, today announced that it has been selected for the...
- Articles 2008-05-01
- Kopin Corporation to Announce First Quarter 2008 Financial Results on Tuesday, May 6
- TAUNTON, Mass. -- Kopin Corporation (NASDAQ: KOPN) plans to announce financial results for the first quarter of fiscal 2008 on Tuesday, May 6, 2008. In conjunction with the announcement, the Company will host a conference call that day at 5:00 p.m. ET. To hear the conference call, please...
- Articles 2008-04-30
- HVVi Semiconductors Announces Revolutionary New Architecture for Silicon Power transistor Design
- First Products Dramatically Boost Power Output, Frequency Performance while Reducing Power Consumption in Radar/ Avionics Designs PHOENIX, April 30 /PRNewswire/ -- HVVi Semiconductors, Inc., a developer of power transistors, announced today the first major advance in silicon RF power transistor design in more than 15 years. ...
- Articles 2008-04-30
- Toshiba Announces New General Purpose transistor Photocouplers
- New Photocouplers in 4-Pin Plastic DIP Meet Requirements for Reinforced Insulation Class International Safety Standards VDE, UL, BSI and SEMKO IRVINE, Calif., April 29 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, announced the TLP781,...
- Articles 2008-04-29
- Innovative Silicon Appoints Dr. Victor Koldyaev as Company's First Fellow
- Top Z-RAM Technologist Driving the Next Frontier in Ultra-Dense, Single Transistor Memory Technology SANTA CLARA, Calif. -- Innovative Silicon Inc. (ISi), developer of the Z-RAM[R] zero-capacitor floating body memory technology, today named Dr. Victor Koldyaev an Innovative Silicon Fellow. Dr. Koldyaev is known industry-wide for his considerable technical...
- Articles 2008-04-29
- << Previous
- page 1 of 1
- Next >>
Premier Vendor Content Whitepapers, webcasts & resources from our Power Center Sponsors
