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	<title><![CDATA[transistor Resources | BNET]]></title>
	<link><![CDATA[http://resources.bnet.com/topic/transistor.html]]></link>
	<description><![CDATA[White papers, case studies, business articles, and blog posts relating to transistor]]></description>
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		<title><![CDATA[Research and Markets: The Need for High Power High Frequency Transistors is Increasing Steadily along with the Huge Demand for Wireless Telecommunications]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2008_July_30/ai_n27952636]]></link>
		<description><![CDATA[DUBLIN, Ireland -- Research and Markets (http://www.researchandmarkets.com/research/9a79ef/gan_rf_08) has announced the addition of the "GaN RF '08" report to their offering.  The need for high power, high frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications. More power, more frequency bands, better linearity and improved efficiency...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 30 Jul 2008 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/analysis.html"><![CDATA[analysis]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
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		<category domain="http://resources.bnet.com/topic/substrate.html"><![CDATA[substrate]]></category>
		<category domain="http://resources.bnet.com/topic/telecommunications.html"><![CDATA[telecommunications]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
		<category domain="http://resources.bnet.com/topic/wi-fi.html"><![CDATA[Wi-Fi]]></category>
		<category domain="http://resources.bnet.com/topic/wimax.html"><![CDATA[WiMAX]]></category>
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	<item>
		<title><![CDATA[Excited About New Chip Geometries? Don't Be Yet]]></title>
		<link><![CDATA[http://industry.bnet.com/technology/1000179/excited-about-new-chip-geometries-dont-be-yet/]]></link>
		<description><![CDATA[M.I.T. researchers have successfully etched a 25 nanometer grid onto a piece of silicon, as NewScientist.com reports, presumably opening a way to pack transistors far more densely than ever before â€" but that's only one hurdle out of the way. by Erik Sherman]]></description>
		<s:doctype><![CDATA[Blog posts]]></s:doctype>
		<pubDate>Mon, 14 Jul 2008 12:19:51 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[Transistor]]></category>
		<category domain="http://resources.bnet.com/topic/chip.html"><![CDATA[Chip]]></category>
		<category domain="http://resources.bnet.com/topic/integrated+circuit+manufacturing+process.html"><![CDATA[Integrated Circuit Manufacturing Process]]></category>
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		<category domain="http://resources.bnet.com/topic/network+technology.html"><![CDATA[Network Technology]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[Hardware]]></category>
		<category domain="http://resources.bnet.com/topic/networking.html"><![CDATA[Networking]]></category>
		<category domain="http://resources.bnet.com/topic/erik+sherman.html"><![CDATA[Erik Sherman]]></category>
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	<item>
		<title><![CDATA[New Infineon RF Power Transistors Offer Highest Peak Power in 700 MHz Band]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_pwwi/is_200806/ai_n26683015]]></link>
		<description><![CDATA[At the IEEE MTT-S International Microwave Symposium here today, Infineon Technologies AG (FRANKFURT: IFX) (NYSE: IFX), a leading supplier of communication ICs and solutions, announced a new family of RF power transistors specifically targeted at wireless infrastructure applications in the 700 MHz frequency band. This band will be used in...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Tue, 17 Jun 2008 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/infineon+technologies+ag.html"><![CDATA[Infineon Technologies AG]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">IFX</category>
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	<item>
		<title><![CDATA[Raby: 'PTH, not transistor, greatest invention']]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb5118/is_6_19/ai_n29442730]]></link>
		<description><![CDATA[ATLANTA-After 50 years in electronics, Jim Raby believes the industry's greatest invention was not the transistor, but the plated through-hole.  The guru of electronics, Raby led what an audience member called a "fireside chat" at the recent Atlanta SMTA Expo. He warmly shared stories from the dawn of the...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sun, 01 Jun 2008 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/electronics.html"><![CDATA[electronics]]></category>
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		<category domain="http://resources.bnet.com/topic/nasa.html"><![CDATA[NASA]]></category>
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	<item>
		<title><![CDATA[Strained Silicon Technology Holds a Promising Future for Ultra High-speed Computing Devices]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2008_April_3/ai_n25123338]]></link>
		<description><![CDATA[PALO ALTO, Calif. -- Strained silicon technology holds a promising future in the semiconductor industry in serving the needs of the next generation high-speed computing devices. Industrial efforts in the space expect to reap long-term benefits as it opens up an entirely new domain in the demanding and competent semiconductor...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 03 Apr 2008 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/computing.html"><![CDATA[computing]]></category>
		<category domain="http://resources.bnet.com/topic/frost+%2526+sullivan.html"><![CDATA[Frost & Sullivan]]></category>
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	<item>
		<title><![CDATA[Things to come?]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb4797/is_4_47/ai_n29425425]]></link>
		<description><![CDATA[Each year, the editors of Technology Review, published by MIT, take a look at what they see as important emerging technologies for readers to watch for in the future. As in the past, the editors have picked 10 potential breakthroughs that could have significant impact on our lives and the...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Tue, 01 Apr 2008 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
		<category domain="http://resources.bnet.com/topic/nanotechnology.html"><![CDATA[Nanotechnology]]></category>
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	<item>
		<title><![CDATA[New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications With Industry-Best Peak Output Power]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_pwwi/is_200804/ai_n24971829]]></link>
		<description><![CDATA[Infineon Technologies AG (FRANKFURT: IFX) (NYSE: IFX), a leading supplier of communication ICs and solutions, today announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These products, which provide peak output power of up to 170 W, extend...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Tue, 01 Apr 2008 00:00:00 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/infineon+technologies+ag.html"><![CDATA[Infineon Technologies AG]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">IFX</category>
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	<item>
		<title><![CDATA[Engineers Make First 'Active Matrix' Display Using Nanowires.]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb5583/is_200803/ai_n25298306]]></link>
		<description><![CDATA[Byline: Purdue University     WEST LAFAYETTE, Ind., March 31 AScribe Newswire -- Engineers have  created the first "active matrix" display using a new class of  transparent transistors and circuits, a step toward realizing  applications such as e-paper, flexible color monitors and  "heads-up" displays...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 31 Mar 2008 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/components.html"><![CDATA[Components]]></category>
		<category domain="http://resources.bnet.com/topic/electronics.html"><![CDATA[electronics]]></category>
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	<item>
		<title><![CDATA[TriQuint Semiconductor Introduces LDMOS RF Power Transistor Product Portfolio at China IIC Show]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2008_March_3/ai_n24358773]]></link>
		<description><![CDATA[TriQuint Adds 35 LDMOS RF Power Transistors for Wireless Base Stations to Its Extensive Power, Filter Portfolio]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 03 Mar 2008 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
		<category domain="http://resources.bnet.com/topic/triquint+semiconductor.html"><![CDATA[TriQuint Semiconductor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">TQNT</category>
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	</item>
	<item>
		<title><![CDATA[Intel Ships New Processors for Embedded, Communications and Storage Markets Based on New Transistors, Manufacturing]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2008_Feb_27/ai_n24326783]]></link>
		<description><![CDATA[Intel Offers 7-Year Extended Life Cycle Support for 45nm Intel[R] Xeon[R] Processors]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 27 Feb 2008 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/intel+corp..html"><![CDATA[Intel Corp.]]></category>
		<category domain="http://resources.bnet.com/topic/manufacturing.html"><![CDATA[manufacturing]]></category>
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		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">INTC</category>
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	</item>
	<item>
		<title><![CDATA[Intel to deliver first computer chip with two billion transistors]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_kmafp/is_200802/ai_n21221647]]></link>
		<description><![CDATA[SAN FRANCISCO AFP &#8212; Intel announced on Monday that it has created a two-billion-transistor computer chip that will give supercomputers "a leap in performance and capabilities."  The world's largest maker of microprocessors says its new Itanium brand chip, codenamed "Tukwila," built for supercomputers increases the power of machines more...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 04 Feb 2008 23:59:59 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/agence+france-presse.html"><![CDATA[Agence France-Presse]]></category>
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	</item>
	<item>
		<title><![CDATA[IBM Commemorates 60th Anniversary of the Transistor and Decades of Innovations]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_pwwi/is_200712/ai_n21160480]]></link>
		<description><![CDATA[On December 16, 1947, scientists at Bell labs succeeded in building what many consider to be the greatest invention of the twentieth century; the transistor. Since then, engineers and scientists have continued to drive performance improvements incorporating hundreds of millions of transistors on a single microchip. ]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Fri, 14 Dec 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/ibm+corp..html"><![CDATA[IBM Corp.]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">IBM</category>
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	</item>
	<item>
		<title><![CDATA[Panasonic Develops a Gallium Nitride  Power Transistor with Ultra High Breakdown Voltage over 10000V]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0RRT/is_2007_Dec_14/ai_n27476272]]></link>
		<description><![CDATA[Osaka, Japan, Dec 13, 2007 - JCN Newswire - Panasonic, the leading brand by which Matsushita Electric Industrial Co., Ltd. is generally known, today announced the development of a Gallium Nitride GaN power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Fri, 14 Dec 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/panasonic.html"><![CDATA[Panasonic]]></category>
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		<category domain="http://resources.bnet.com/topic/.html"><![CDATA[]]></category>
	</item>
	<item>
		<title><![CDATA[NEC and NEC Electronics Develop Novel Channel-Engineering Technology for Advanced CMOS Transistors]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0RRT/is_2007_Dec_13/ai_n27475322]]></link>
		<description><![CDATA[Tokyo, Japan, Dec 13, 2007 - JCN Newswire - NEC Corporation and NEC Electronics Corporation have successfully developed design technology to realize optimum channel structure in CMOS transistors for advanced LSIs in the 32nm generation and beyond. This achievement relies on visualization of impurity distributions in transistors based on electron...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 13 Dec 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/nec+corp..html"><![CDATA[NEC Corp.]]></category>
		<category domain="http://resources.bnet.com/topic/nec+electronics+corp..html"><![CDATA[NEC Electronics Corp.]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
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		<category domain="http://rss.financialcontent.com/stocksymbol">6723</category>
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	<item>
		<title><![CDATA[Diodes, Inc. Releases New Medium Power Bipolar Junction Transistors]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2007_Nov_29/ai_n27458680]]></link>
		<description><![CDATA[DALLAS -- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, today announced the release of 21 medium-power bipolar junction transistors in its SOT89-3L package. These new devices are suitable for a wide range of...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 29 Nov 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
		<category domain="http://resources.bnet.com/topic/.html"><![CDATA[]]></category>
	</item>
	<item>
		<title><![CDATA[Samsung says new X-ray detector is first of its type]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_kmafp/is_200711/ai_n21122022]]></link>
		<description><![CDATA[SEOUL AFP &#8212; South Korea's Samsung Electronics said Thursday it has developed a new digital X-ray system which can deliver sharper images and save time and money.  The advanced digital X-ray detector using thin-film transistor technology is the first of its kind in the world, the firm said. ...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Wed, 21 Nov 2007 23:59:59 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/agence+france-presse.html"><![CDATA[Agence France-Presse]]></category>
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	</item>
	<item>
		<title><![CDATA[Intel formally debuts 45-nm Penryn processors (Electronic News)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb5934/is_200711/ai_n23911140]]></link>
		<description><![CDATA[Using for the first time what Intel Corp. co-founder Gordon Moore calls one of the biggest transistor advancements in 40 years, the chip giant Sunday released formal details on the long-awaited http://www.edn.com/blog/400000040/post/1480014548.html       Using for the first time what Intel Corp. co-founder Gordon Moore calls...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Mon, 19 Nov 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/intel+corp..html"><![CDATA[Intel Corp.]]></category>
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	<item>
		<title><![CDATA[Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_m0EIN/is_2007_Nov_11/ai_n21094123]]></link>
		<description><![CDATA[Sixteen Eco-Friendly, Faster and 'Cooler' Chips Incorporate 45nm Hafnium-Based High-k Metal Gate Transistors]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Sun, 11 Nov 2007 00:00:00 -0800</pubDate>
		<category domain="http://resources.bnet.com/topic/intel+corp..html"><![CDATA[Intel Corp.]]></category>
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	<item>
		<title><![CDATA[Revolution ahead in data storage, say IT wizards]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_kmafp/is_200711/ai_n21082663]]></link>
		<description><![CDATA[PARIS AFP &#8212; The world's smallest hard drives have already shrunk to the size of a postage stamp, but nanoscale computing may soon make that achievement look elephantine, say some of the stars of information technology.  Breathtaking change is on the horizon in personal and industrial data storage, the...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 01 Nov 2007 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/agence+france-presse.html"><![CDATA[Agence France-Presse]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
		<category domain="http://resources.bnet.com/topic/storage.html"><![CDATA[Storage]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
		<category domain="http://resources.bnet.com/topic/.html"><![CDATA[]]></category>
	</item>
	<item>
		<title><![CDATA[Fullerene transistor breaks records.(ELECTRONICS)]]></title>
		<link><![CDATA[http://findarticles.com/p/articles/mi_hb6622/is_200711/ai_n26379463]]></link>
		<description><![CDATA[High-performance field effect transistors made from fullerene have  been successfully developed by scientists at the Georgia Institute of  Technology Georgia Tech, USA. The devices, which are very stable, have  electronmobility values that outperform amorphous silicon, low threshold  voltages and large on-off ratios. They can also be...]]></description>
		<s:doctype><![CDATA[Research articles]]></s:doctype>
		<pubDate>Thu, 01 Nov 2007 23:59:59 -0700</pubDate>
		<category domain="http://resources.bnet.com/topic/electronics.html"><![CDATA[electronics]]></category>
		<category domain="http://resources.bnet.com/topic/georgia+institute+of+technology.html"><![CDATA[Georgia Institute of Technology]]></category>
		<category domain="http://resources.bnet.com/topic/georgia+tech.html"><![CDATA[Georgia Tech]]></category>
		<category domain="http://resources.bnet.com/topic/hardware.html"><![CDATA[HARDWARE]]></category>
		<category domain="http://resources.bnet.com/topic/scientist.html"><![CDATA[scientist]]></category>
		<category domain="http://resources.bnet.com/topic/semiconductors.html"><![CDATA[Semiconductors]]></category>
		<category domain="http://resources.bnet.com/topic/substrate.html"><![CDATA[substrate]]></category>
		<category domain="http://resources.bnet.com/topic/transistor.html"><![CDATA[transistor]]></category>
		<category domain="http://resources.bnet.com/topic/.html"><![CDATA[]]></category>
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